SiC (Silicon Carbide) MOSFET power modules use Kelvin source connections and isolation amplifier gate driver connectors for high-speed switching at up to 1700V in EV inverters, solar inverters, and traction drives.
| Pin | Name | Function | Type |
|---|---|---|---|
| 1 | GATE | Gate drive signal | I/O |
| 2 | SOURCE_K | Kelvin source for gate drive | GND |
| 3 | SOURCE_P | Power source for load current | PWR |
| 4 | DRAIN | Drain power terminal | PWR |
| 5 | T_SENSE | Temperature sensor NTC | ADC |
| 6 | T_GND | Temperature sensor ground | GND |
SiC (Silicon Carbide) MOSFET power modules use Kelvin source connections and isolation amplifier gate driver connectors for high-speed switching at up to 1700V in EV inverters, solar inverters, and traction drives.